The Indiana Cooler: A Retrospective

نویسندگان

چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

The Indiana Cooler: A Retrospective

From 1983 to 2002, the Indiana Cooler was constructed and operated at the Indiana University Cyclotron Facility. During that period, a relatively small group of people built an accelerator complex, explored the new technology of electron cooling, and demonstrated its usefulness in nuclear and particle physics. This review recounts the history of the project, describes the facility, and summariz...

متن کامل

The Indiana University Cooler Injection Synchrotron Rf Cavity*

A small 2.2 Tesla-meter booster synchrotron is under construction at the Indiana University Cyclotron Facility to boost polarized beam performance in the electron cooled Indiana University Cooler Synchrotron. Polarized light proton or deuteron beam from a high intensity polarized ion source will be preaccelerated to 7 and 6 MeV respectively by an RFQ/DTL accelerator. The beams are then debunche...

متن کامل

Cooler Injector Synchrotron Control Hardware at Indiana University Cyclotron Facility

This paper describes the control hardware at IUCF for the newly commissioned 200 MeV CIS ring. A combination of “commercial off the shelf” and custom “in house” hardware makes up DAC, ADC, and timing control for this synchrotron. The focus of this paper is on the custom designed hardware.

متن کامل

A Cooler Raman Laser

P ower dissipation, which results in heat generation in electronic chips, is the number one difficulty facing the semiconductor industry. The problem is so severe that it threatens to halt the huge development that has been enjoyed since the microprocessor industry’s inception — a doubling in processor performance roughly every 18 months, which was predicted by the celebrated Moore’s law. And t...

متن کامل

SiGeC Cantilever Micro Cooler

The fabrication and characterization of SiGeC cantilever microcoolers are described. Silicon on insulator (SOI) was used as the substrate, and two layers of 3 μm p-SiGe0.07C0.0075 and 1.14 μm n-SiGe0.07C0.0075 lattice matched to silicon were grown using molecular beam epitaxy. The uni couple cooler was fabricated using conventional integrated circuit (IC) processing, and the cantilever structur...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Annual Review of Nuclear and Particle Science

سال: 2007

ISSN: 0163-8998,1545-4134

DOI: 10.1146/annurev.nucl.57.090506.123102